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| inchange semiconductor product specification silicon npn power transistors mje800/801/802/803 description ? ? with to-126 package ? complement to type mje700/701/702/703 ?high dc current gain ? darlington applications ? designed for general?purpose amplifier and low?speed switching applications pinning (see fig.2) pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximun ratings (ta=25 ?? ) symbol parameter conditions value unit mje800/801 60 v cbo collector-base voltage MJE802/803 open emitter 80 v mje800/801 60 v ceo collector-emitter voltage MJE802/803 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i b base current 0.1 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors mje800/801/802/803 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit mje800/801 60 v (br)ceo collector-emitter breakdown voltage MJE802/803 i c =50ma;i b =0 80 v mje800/802 i c =1.5a ;i b =30ma 2.5 v cesat-1 collector-emitter saturation voltage mje801/803 i c =2a ;i b =40ma 2.8 v v cesat-2 collector-emitter saturation voltage i c =4a ;i b =40ma 3.0 v mje800/802 i c =1.5a ; v ce =3v v be-1 base-emitter on voltage mje801/803 i c =2a ; v ce =3v 2.5 v v be-2 base-emitter on voltage i c =4a ; v ce =3v 3.0 v mje800/801 v ce =60v; i b =0 i ceo collector cut-off current MJE802/803 v ce =80v; i b =0 100 | a i cbo collector cut-off current v cb =rated bv ceo ; i e =0 t c =100 ?? 100 500 | a i ebo emitter cut-off current v eb =5v; i c =0 2 ma mje800/802 i c =1.5a ; v ce =3v h fe-1 dc current gain mje801/803 i c =2a ; v ce =3v 750 h fe-2 dc current gain i c =4a ; v ce =3v 100 inchange semiconductor product specification 3 silicon npn power transistors mje800/801/802/803 package outline fig.2 outline dimensions |
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